silicon npn power transistor 2N3055 description excellent safe operating area dc current gain-h fe =20-70@i c = 4a collector-emitter saturation voltage- : v ce(sat )= 1.1 v(max)@ i c = 4a complement to type mj2955 applications designed for general-purpose switching and amplifier applications absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 100 v v cer collector-emitter voltage 70 v v ceo collector-emitter voltage 60 v v ebo emitter-base voltage 7 v i c collector current-continuous 15 a i b b base current 7 a p c collector power dissipation@t c =25 115 w t j junction temperature 200 t stg storage temperature -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.52 /w 1 tiger electronic co.,ltd
silicon npn power transistors 2N3055 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v ceo(sus) collector-emitter sustaining voltage i c =200ma ; i b =0 60 v v cer(sus) collector-emitter sustaining voltage i c =200ma ; r be =100 70 v v ce (sat) -1 collector-emitter saturation voltage i c = 4a; i b = 0.4a b 1.1 v v ce (sat) -2 collector-emitter saturation voltage i c = 10a; i b = 3.3a 3.0 v v be( on ) base-emitter on voltage i c = 4a ; v ce = 4v 1.5 v i ceo collector cutoff current v ce = 30v; i b =0 b 0.7 ma i cex collector cutoff current v ce = 100v; v be(off) = 1.5v v ce = 100v; v be(off) = 1.5v,t c =150 1.0 5.0 ma i ebo emitter cutoff current v eb = 7.0v; i c =0 5.0 ma h fe-1 dc current gain i c = 4a ; v ce = 4v 20 70 h fe-2 dc current gain i c = 10a ; v ce = 4v 5.0 i s/b second breakdown collector current with base forward biased v ce = 40v,t= 1.0s,nonrepetitive 2.87 a f t current gain-bandwidth product i c = 0.5a ; v ce = 10v;f=1.0mhz 2.5 mhz 2
silicon npn power transistors 2N3055 3
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